Department of Electrical and Electronic Engineering
Professor Dr. Quazi Deen Mohammad Khosru  Adviser
Name :
Professor Dr. Quazi Deen Mohammad Khosru
Employee ID
710001150
Designation
Adviser  
Department
Department of Electrical and Electronic Engineering
Faculty
Faculty of Engineering
Personal Webpage
http://faculty.daffodilvarsity.edu.bd/profile/eee/Mohammad-Khosru.html
E-mail
qdmkhosru@eee.buet.ac.bd
Phone
Cell-Phone
01819410845
University Degree Year Field of Specialization
Aligarh Muslim University Aligarh, India B.Sc. in EEE 1986  Nanodevice Reliability, Quantum Mechanical Modeling, Reliability of high-κ Dielectrics,  Physics, Modeling and Characterization of Novel Nanoscale MOS Devices, 2-D Material Transistor, Junctionless Transistor.
Bangladesh University of Engineering and Tech M.S. in EEE 1989
Osaka University, Osaka, Japan  Ph.D. in EE 1994

Conference :

 

  1. SUZ Khan and Q. D. M. Khosru, “Quantum Mechanical Modeling and Simulation of Monolayer WSe2 Channel Field Effect Transistor”, 227th ECS Meeting, 2015.
  2. SUZ Khan, MS Hossain, FU Rahman, R Zaman, MO Hossen, and QDM Khosru, “Uncoupled Mode Space Approach Towards Transport Modeling of Gate-all-around InxGa1-xAs Nanowire MOSFET”, 8th International Conference on Electrical & Computer Engineering (ICECE), 2014.
  3. MH Alam, KI Masood, and QDM Khosru, “Effect of Biaxial Strain on Structural and Electronic Properties of Graphene / Boron Nitride Hetero Bi-layer Structure”, 8th International Conference on Electrical & Computer Engineering (ICECE), 2014.
  4. A Shadman, E Rahman, SR Biswas, K Datta, and QDM Khosru, “Ballistic Transport Characteristic of InGaAs Quantum Well Surface Channel MOSFET Including Effects of Physical Device Parameter”, 8th International Conference on Electrical & Computer Engineering (ICECE), 2014.
  5. SR Biswas, K Datta, A Shadman, E Rahman, and QDM Khosru, “Quantum Ballistic Simulation Study of In0.7Ga0.3As/InAs/In0.7Ga0.3As Quantum Well MOSFET”, 8th International Conference on Electrical & Computer Engineering (ICECE), 2014.
  6. E Rahman, A Shadman, K Datta, SR Biswas, and QDM Khosru, “Capacitance-Voltage Characterization and Semi-classical Transport Analysis of InxGa1-xAs Surface Channel Quantum Well MOSFET”, 8th International Conference on Electrical & Computer Engineering (ICECE), 2014.
  7. E Rahman, A Shadman, SR Biswas, K Datta, QDM Khosru,  “InXGa1-XAs Surface Channel Quantum Well MOSFET: Quantum Ballistic Simulation Using Mode Space Approach”, 11th International Conference on Semiconductor Electronics, 2014, Kuala Lumpur, Malaysia.
  8. SR Biswas, K Datta, E Rahman, A Shadman, QDM Khosru, “Quantum Ballistic Simulation Study of InGaAs/InAs/InGaAs Quantum Well MOSFET: Effects of Doping and Physical Device Parameters”, 11th International Conference on Semiconductor Electronics, 2014, Kuala Lumpur, Malaysia.
  9. SUZ Khan, MS Hossain, MO Hossen, FU Rahman, R Zaman, QDM Khosru, “Analytical Modeling of Gate Capacitance and Drain Current of Gate-all-around InxGa1-xAs Nanowire MOSFET”, 2nd International Conference on Electronic Design (ICED 2014), Penang, Malaysia.
  10. MH Bhuyan, QDM Khosru, “Linear asymmetric pocket profile based low frequency drain current flicker noise model for pocket implanted nanoscale n-MOSFET”, International Conference on Electrical Information and Communication Technology (EICT).
  11. SUZ Khan, MS Hossain, FU Rahman, MO Hossen, R Zaman, QDM Khosru, “Carrier Transport Phenomena in Cylindrical Channel III-V Gate-All-Around Nanowire Transistor”, International Semiconductor Device Research Symposium (ISDRS), 2013.
  12. IA Niaz, MH Alam, I Ahmed, ZA Azim, N Chowdhury, QDM Khosru, “Physical/process parameter dependence of gate capacitance and ballistic performance of InAsySb1−y Quantum Well Field Effect Transistors”, IEEE 5th International Nanoelectronics Conference (INEC), 2013.
  13. SUZ Khan, MS Hossain, FU Rahman, MO Hossen, R Zaman, QDM Khosru, “Capacitance-Voltage Characteristics of Gate-All-Around InxGa1-xAs Nanowire Transistor”, 223rd ECS Meeting (May 12-17, 2013).
  14. N Chowdhury, Z Al Azim, M Imtiaz Ahmed, MH Alam, IA Niaz, QDM Khosru, “An Analytical Model to Determine the Quantized Energy Levels and Wave Functions for Quantum Well Devices”, 224th ECS Meeting (October 27–November 1, 2013).
  15. N Chowdhury, I Ahmed, Z Al Azim, MH Alam, IA Niaz, QDM Khosru, “A Physically Based Analytical Model to Predict Quantized Eigen Energies and Wave Functions Incorporating Penetration Effect”, 224th ECS Meeting (October 27–November 1, 2013).
  16. N Chowdhury, SMF Azad, QDM Khosru, “Negative Capacitance Tunnel Field Effect Transistor: A Novel Device with Low Subthreshold Swing and High on Current”, 224th ECS Meeting (October 27–November 1, 2013).
  17. M.H. Alam, I.A. Niaz, I. Ahmed, Z. Al Azim, N. Chowdhury and Q.D.M. Khosru "InxGa1-xSb:MOSFET Performance Analysis by Self Consistent CV Characterization and DirectTunneling Gate Leakage Current", 2012 IEEE International Conference on Electro/Information Technology  (EIT 2012) pp.1-6, 6-8 May 2012,Indianapolis, USA
  18. MS Hossain, SUZ Khan, MO Hossen, FU Rahman, R Zaman, QDM Khosru, Analytical modeling of potential profile and threshold voltage for rectangular gate-all-around III–V nanowire MOSFETs with ATLAS verification, Electron Devices and Solid State Circuit (EDSSC), 2012.
  19. MO Hossen, MS Hossain, SUZ Khan, FU Rahman, R Zaman, QDM Khosru,  Ballistic performance limit and gate leakage modeling of Rectangular Gate-all-around InGaAs Nanowire Transistors with ALD Al 2 O 3 as Gate Dielectric, Electron Devices and Solid State Circuit (EDSSC), 2012.
  20. R Zaman, SUZ Khan, MS Hossain, FU Rahman , MO Hossen, QDM Khosru, Self-consistent determination of threshold voltage of In-rich Gate-All-Around In x Ga 1− x As nanowire transistor incorporating quantum mechanical effect, - Electrical & Computer Engineering (ICECE), 2012 7th, 2012.
  21. Characterization of interface trap density of In-rich InGaAs Gate-all-around nanowire MOSFETs
    FU Rahman, MS Hossain, SUZ Khan, R Zaman, MO Hossen, QDM Khosru - Electrical & Computer Engineering (ICECE), 2012, 7th, 2012.
  22. Akanda, M.R.K.; Khosru, Q.D.M.; , "Analysis of output transconductance of FinFETs incorporating quantum mechanical and temperature effects with 3D temperature distribution," Semiconductor Device Research Symposium (ISDRS), 2011 International , vol., no., pp.1-2, 7-9 Dec. 2011.

 

Professor and Head

  • Bangladesh University of Engineering and Technology.